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Issue 12, 2017
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Performance optimization in gate-tunable Schottky junction solar cells with a light transparent and electric-field permeable graphene mesh on n-Si

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Abstract

Gate-tunable Schottky junction solar cells (SJSCs) based on graphene and graphene mesh electrodes on n-type Si are fabricated and the effect of the external gate voltage (Vg) on the photovoltaic characteristics is investigated. The power conversion efficiencies (PCEs) of both devices continuously increase with increasing absolute values of Vg. Importantly, despite the slightly lower PCE values at Vg = 0 V, the graphene mesh on Si SJSC shows more rapid enhancement of PCE values, from 5.7% to 8.1%, with Vg varied from 0 V to −1 V. The finite element simulation highlights the benefits of the graphene mesh electrodes from the non-uniform and dynamic modulation of potential distributions driven correlatively by a work function change in the graphene regions and electric-field penetration through the hole regions.

Graphical abstract: Performance optimization in gate-tunable Schottky junction solar cells with a light transparent and electric-field permeable graphene mesh on n-Si

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Publication details

The article was received on 20 Dec 2016, accepted on 26 Feb 2017 and first published on 14 Mar 2017


Article type: Paper
DOI: 10.1039/C6TC05502H
Citation: J. Mater. Chem. C, 2017,5, 3183-3187
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    Performance optimization in gate-tunable Schottky junction solar cells with a light transparent and electric-field permeable graphene mesh on n-Si

    S. H. Kim, J. H. Lee, J. Park, M. Hwang, H. Park, K. J. Choi and W. I. Park, J. Mater. Chem. C, 2017, 5, 3183
    DOI: 10.1039/C6TC05502H

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