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Journal of Materials Chemistry C

Materials for optical, magnetic and electronic devices

Paper

Fabrication of high-performance p-type thin film transistors using atomic-layer-deposited SnO films

*
Corresponding authors
a
Center for Electronic Materials, Korea Institute of Science and Technology, Seoul, South Korea
E-mail: s.k.kim@kist.re.kr
b
Department of Materials Science and Engineering, Seoul National University, Seoul, South Korea
c
Division of Advanced Materials, Korea Research Institute of Chemical Technology, Daejeon, South Korea
E-mail: jhan@krict.re.kr
d
KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, Korea
J. Mater. Chem. C, 2017,5, 3139-3145

DOI: 10.1039/C6TC04750E
Received 02 Nov 2016, Accepted 24 Feb 2017
First published online 27 Feb 2017
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Supplementary Info