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Solution-Processed SnO2 Thin Film for Hysteresis-less 19.2% Planar Perovskite Solar Cell

Abstract

Hysteresis-less and high efficiency planar perovskite solar cell has been developed using a solution-processed SnO2 electron transporting layer (ETL). Tin(IV) isopropoxide dissolved in isopropanol (IPA) is spin-coated on a fluorine-doped tin oxide (FTO) substrate in a nitrogen atmosphere. Effects of annealing temperature and precursor concentration on photovoltaic performance are systematically investigated. Annealing temperature is scanned from 100 oC to 500 oC, where the 250 oC-annealed SnO2 film demonstrates best performance along with negligible current-voltage hysteresis. The SnO2 film annealed at 250 oC shows X-ray amorphous, while nanocrystallite is observed from SnO2 annealed at 500 oC. Faster stabilization of photocurrent and lower interfacial capacitance for the 250 oC-annealed SnO2 than for the 500 oC-annealed one is responsible for the markedly reduced hysteresis. Photovoltaic performance and hysteresis are influenced by precursor concentration, where 0.1 M shows hysteresis-free higher performance among the concentrations investigated ranging from 0.05 M to 0.2 M owing to larger and faster photoluminescence quenching. The planar (HC(NH2)2PbI3)0.875(CsPbBr3)0.125 perovskite formed on the 40 nm-thick 0.1 M-based and 250 oC-annealed SnO2 thin film delivers power conversion efficiency (PCE) of 19.17% averaged out from the forward scanned PCE of 19.40% and the reverse scanned PCE of 18.93%.

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Publication details

The article was received on 13 Sep 2017, accepted on 07 Nov 2017 and first published on 07 Nov 2017


Article type: Paper
DOI: 10.1039/C7TA08040A
Citation: J. Mater. Chem. A, 2017, Accepted Manuscript
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    Solution-Processed SnO2 Thin Film for Hysteresis-less 19.2% Planar Perovskite Solar Cell

    K. Jung , J. Seo, S. Lee, H. Shin and N. Park, J. Mater. Chem. A, 2017, Accepted Manuscript , DOI: 10.1039/C7TA08040A

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