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Issue 40, 2017
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Enhancing doping efficiency by improving host-dopant miscibility for fullerene-based n-type thermoelectrics

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Abstract

This paper describes a promising n-type doping system with high performance for thermoelectric applications. By introducing the polar triethylene glycol (TEG) side chain onto both fullerene host (PTEG-1) and dopant (TEG-DMBI) materials, the TEG-DMBI doped PTEG-1 films obtained through solution processing provide a better miscibility compared with films doped with commercially available N-DMBI (bearing a dimethylamino group instead of TEG), as determined by phase imaging AFM (atomic force microscopy) measurements and coarse-grain molecular dynamics simulations, leading to high doping efficiency up to 18% at 20 mol% doping concentration and thus high carrier density and mobility, which are critical to the electrical conductivity. Therefore a record power factor of 19.1 μW m−1 K−2 is obtained with an electrical conductivity of 1.81 S cm−1, one of the highest values reported for solution processable fullerene derivatives as n-type organic materials for thermoelectric applications to date.

Graphical abstract: Enhancing doping efficiency by improving host-dopant miscibility for fullerene-based n-type thermoelectrics

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Publication details

The article was received on 27 Jul 2017, accepted on 14 Sep 2017 and first published on 22 Sep 2017


Article type: Paper
DOI: 10.1039/C7TA06609K
Citation: J. Mater. Chem. A, 2017,5, 21234-21241
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    Enhancing doping efficiency by improving host-dopant miscibility for fullerene-based n-type thermoelectrics

    L. Qiu, J. Liu, R. Alessandri, X. Qiu, M. Koopmans, Remco W. A. Havenith, S. J. Marrink, R. C. Chiechi, L. J. Anton Koster and J. C. Hummelen, J. Mater. Chem. A, 2017, 5, 21234
    DOI: 10.1039/C7TA06609K

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