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Cu2−xGeS3: a new hole transporting material for stable and efficient perovskite solar cells

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Abstract

Cu2−xGeS3 is a kind of inorganic semiconducting compound with earth abundant elemental storage, excellent chemical stability and environmentally friendly characteristics. It has been used as a light absorption material in traditional p–n junction thin film solar cells. This research presents that Cu2−xGeS3 can also serve as a highly efficient hole transporting material for perovskite solar cells with enhanced stability. The results show that perovskite solar cells based on the Cu2−xGeS3 film can retain 95% power conversion efficiency when exposed to 50% relative humidity for 30 days in air under room lamp light irradiation, while the device using spiro-OMeTAD as the hole transporting material degrades considerably in 2 days and nearly completely degrades in 10 days. Mechanistic investigation shows that the inherent stability and hydrophobic nature of the Cu2−xGeS3 film contribute to the enhanced moisture stability. This investigation provides a material choice for high-efficiency perovskite solar cells with enhanced moisture stability.

Graphical abstract: Cu2−xGeS3: a new hole transporting material for stable and efficient perovskite solar cells

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Publication details

The article was received on 13 Jul 2017, accepted on 27 Aug 2017 and first published on 29 Aug 2017


Article type: Paper
DOI: 10.1039/C7TA06088B
Citation: J. Mater. Chem. A, 2017, Advance Article
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    Cu2−xGeS3: a new hole transporting material for stable and efficient perovskite solar cells

    X. Jin, X. Lei, C. Wu, G. Jiang, W. Liu, H. Zeng, T. Chen and C. Zhu, J. Mater. Chem. A, 2017, Advance Article , DOI: 10.1039/C7TA06088B

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