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High Thermoelectric Performance by Nano-inclusion and Randomly Distributed Interface Potential in N-type (PbTe0.93-xSe0.07Clx)0.93(PbS)0.07 Composites

Abstract

In a composite of two dissimilar or homologous semiconductors with different energy band gaps or metal/semiconductor composites, we expect a band bending effect at the interfaces. The band bending effect by different Fermi levels of two compounds can selectively scatter carriers due to energy-dependent scattering time, resulting in the enhancement of Seebeck coefficient. In addition, the nano-inclusion in a matrix effectively scatters phonons. Here, we demonstrate the effect of electron and phonon scattering by nano-inclusion in n-type (PbTe0.93-xSe0.07Clx)0.93(PbS)0.07 (x = 0.0005, 0.01, 0.1 and 0.2) composites, thereby the nano-inclusion in a matrix increases the Seebeck coefficient as well as reduces lattice thermal conductivity in (PbTe0.93-xSe0.07Clx)0.93(PbS)0.07. The chlorine doping increases Fermi level to the bottom of conduction band giving rise to increase of electron concentration. Simultaneous emergence of high Seebeck coefficient and low thermal conductivity gives the exceptional ZT value of 1.52 at 700 K for small chloride doping (x = 0.0005), which is very high value in n-type thermoelectric materials. The randomly distributed interface potential, induced by Fermi level tuning, with nano-inclusion is a new criteria to analyze thermoelectric properties.

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Publication details

The article was received on 26 Mar 2017, accepted on 18 May 2017 and first published on 18 May 2017


Article type: Paper
DOI: 10.1039/C7TA02643A
Citation: J. Mater. Chem. A, 2017, Accepted Manuscript
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    High Thermoelectric Performance by Nano-inclusion and Randomly Distributed Interface Potential in N-type (PbTe0.93-xSe0.07Clx)0.93(PbS)0.07 Composites

    D. Ginting, C. Lin, J. H. Yun, B. Yu, S. Kim and J. Rhyee, J. Mater. Chem. A, 2017, Accepted Manuscript , DOI: 10.1039/C7TA02643A

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