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Issue 22, 2017
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Self-driven, broadband and ultrafast photovoltaic detectors based on topological crystalline insulator SnTe/Si heterostructures

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Abstract

As a new class of materials that have been proved to possess exotic surface state properties protected by mirror symmetry, topological crystalline insulators (TCIs) have attracted much attention owing to their promising applications in dissipationless novel electronic and optoelectronic devices. Herein, we demonstrated the fabrication of high-quality TCI SnTe/Si heterostructures with excellent diode characteristics by a simple chemical vapor deposition (CVD) process. The SnTe/Si heterostructures exhibited pronounced photovoltaic behavior under light illumination, enabling the function of the devices as self-driven, stable and broadband photovoltaic detectors with a detection range from 254 nm ultraviolet (UV) light to 1550 nm near-infrared (NIR) light. Further investigation of the device characteristics revealed an ultrafast response speed of ∼8 μs and a high detectivity of 8.4 × 1012 Jones (Jones = cm Hz1/2 W−1) for the heterostructures, because the separation and transport of photogenerated carriers were greatly facilitated due to the existence of built-in potential at the SnTe/Si interface. To the best of our knowledge, this is the first time the TCI/Si heterostructure is utilized in photovoltaic and photodetecting devices. Given the excellent performance of the SnTe/Si heterostructures, they may have important applications in next-generation optoelectronic devices fabricated from topological insulator materials.

Graphical abstract: Self-driven, broadband and ultrafast photovoltaic detectors based on topological crystalline insulator SnTe/Si heterostructures

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Publication details

The article was received on 13 Mar 2017, accepted on 14 May 2017 and first published on 15 May 2017


Article type: Paper
DOI: 10.1039/C7TA02222K
Citation: J. Mater. Chem. A, 2017,5, 11171-11178
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    Self-driven, broadband and ultrafast photovoltaic detectors based on topological crystalline insulator SnTe/Si heterostructures

    S. Gu, K. Ding, J. Pan, Z. Shao, J. Mao, X. Zhang and J. Jie, J. Mater. Chem. A, 2017, 5, 11171
    DOI: 10.1039/C7TA02222K

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