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A type-II GeSe/SnS heterobilayer with suitable direct gap, superior optical absorption and broad spectrum for photovoltaic applications

Abstract

Van der Waals (vdW) heterobilayer is emerging as the unique structures for next-generation electronic and optoelectronic devices. In this work, we predict that GeSe/SnS heterobilayer has a direct band structure with the gap value of about 1.519 eV and typical type-II band alignment. Moreover, it possesses the characteristics of superior optical absorption (~105) and broad absorption spectrum from visible light to the near ultraviolet. In addition, the GeSe/SnS heterobilayer also exhibits obviously anisotropic electronic transport and optical properties with larger current and stronger optical absorption along the zigzag direction. Meanwhile, the interlayer coupling and external electric-field are identified to be effective methods to modify its electronic and optical properties. Thus, these predicted results indicate that GeSe/SnS heterobilayer will have promising applications in the photovoltaic devices.

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Publication details

The article was received on 08 Mar 2017, accepted on 26 Apr 2017 and first published on 27 Apr 2017


Article type: Paper
DOI: 10.1039/C7TA02109G
Citation: J. Mater. Chem. A, 2017, Accepted Manuscript
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    A type-II GeSe/SnS heterobilayer with suitable direct gap, superior optical absorption and broad spectrum for photovoltaic applications

    C. Xia, J. Du, W. Xiong, Y. Jia, Z. Wei and J. Li, J. Mater. Chem. A, 2017, Accepted Manuscript , DOI: 10.1039/C7TA02109G

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