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Multiferroic Bi2FeCrO6 based p-i-n Heterojunction Photovoltaic devices

Abstract

Photovoltaic devices made of ferroelectric films are being widely studied, due to the efficient charge separation driven by the internal polarization as well as above-bandgap generated photovoltages. These features may enable power conversion efficiencies (PCE) exceeding the Shockley–Queisser limit, which characterizes conventional semiconductor-based solar cells. However, improving the PCE of such devices is still a challenge, mainly due to the weak charge transport and collection induced by recombination of photocarriers. Here, we formed p−i−n heterojunction devices based on double-perovskite multiferroic Bi2FeCrO6 thin films. The latter acts as an intrinsic absorber, sandwiched between hole- and electron-transporting layers, a p−type NiO and an n−type Nb-doped SrTiO3 semiconductor, respectively. Under 1 sun illumination, the optimized p−i−n device yields an open-circuit voltage of 0.53 V and a short-circuit current density of 8.0 mA cm-2, leading to a PCE of ca. 2.0%, a four-fold enhancement compared to that of the i−n device architecture.

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Publication details

The article was received on 21 Feb 2017, accepted on 18 Apr 2017 and first published on 18 Apr 2017


Article type: Paper
DOI: 10.1039/C7TA01604B
Citation: J. Mater. Chem. A, 2017, Accepted Manuscript
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    Multiferroic Bi2FeCrO6 based p-i-n Heterojunction Photovoltaic devices

    W. Huang, C. Harnagea, D. Benetti, M. Chaker, F. Rosei and R. Nechache, J. Mater. Chem. A, 2017, Accepted Manuscript , DOI: 10.1039/C7TA01604B

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