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Issue 21, 2017
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Multiferroic Bi2FeCrO6 based p–i–n heterojunction photovoltaic devices

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Abstract

Photovoltaic devices made of ferroelectric films are being widely studied, due to their efficient charge separation driven by the internal polarization as well as above-bandgap generated photovoltages. These features may enable power conversion efficiencies (PCE) exceeding the Shockley–Queisser limit, which characterizes conventional semiconductor-based solar cells. However, improving the PCE of such devices is still a challenge, mainly due to the weak charge transport and collection induced by the recombination of photocarriers. Here, we fabricated p–i–n heterojunction devices based on double-perovskite multiferroic Bi2FeCrO6 thin films. The latter act as intrinsic absorbers, sandwiched between hole- and electron-transporting layers, a p-type NiO and an n-type Nb-doped SrTiO3 semiconductor, respectively. Under 1 sun illumination, the optimized p–i–n device yields an open-circuit voltage of 0.53 V and a short-circuit current density of 8.0 mA cm−2, leading to a PCE of ca. 2.0%, a four-fold enhancement compared to that of the i–n device architecture.

Graphical abstract: Multiferroic Bi2FeCrO6 based p–i–n heterojunction photovoltaic devices

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Publication details

The article was received on 21 Feb 2017, accepted on 18 Apr 2017 and first published on 18 Apr 2017


Article type: Paper
DOI: 10.1039/C7TA01604B
Citation: J. Mater. Chem. A, 2017,5, 10355-10364
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    Multiferroic Bi2FeCrO6 based p–i–n heterojunction photovoltaic devices

    W. Huang, C. Harnagea, D. Benetti, M. Chaker, F. Rosei and R. Nechache, J. Mater. Chem. A, 2017, 5, 10355
    DOI: 10.1039/C7TA01604B

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