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Nickel oxide nanoparticles for efficient hole transport in p-i-n and n-i-p perovskite solar cells

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Abstract

Here, a low-temperature solution-processed nickel oxide (NiOx) thin film was first employed as a hole transport layer in both inverted (p-i-n) planar and regular (n-i-p) mesoscopic organic–inorganic hybrid perovskite solar cells (PVSCs). In p-i-n PVSCs, the wetting properties, perovskite morphology, absorption and hole extraction process can be significantly enhanced with a suitable surface treatment, resulting in a significantly increased fill factor (from 0.684 to 0.742) and short circuit current density (from 16.73 to 20.66 mA cm−2). On the basis of the treated NiOx thin film, a promising power conversion efficiency of 15.9% with negligible hysteresis was obtained for inverted planar PVSCs, and 11.8% was obtained for the flexible devices. More importantly, the presynthesized NiOx can be directly deposited on the perovskite film as a top hole transport layer without decomposing the perovskite in n-i-p PVSCs. The resulting n-i-p device shows a five-fold improvement in power conversion efficiency when compared with a hole transport material free device, which indicates that this solution-processed NiOx is promising for all-inorganic charge selection layer based, stable and low cost PVSCs.

Graphical abstract: Nickel oxide nanoparticles for efficient hole transport in p-i-n and n-i-p perovskite solar cells

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Publication details

The article was received on 21 Feb 2017, accepted on 03 Mar 2017, published on 03 Mar 2017 and first published online on 03 Mar 2017


Article type: Paper
DOI: 10.1039/C7TA01593C
Citation: J. Mater. Chem. A, 2017, Advance Article
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    Nickel oxide nanoparticles for efficient hole transport in p-i-n and n-i-p perovskite solar cells

    Z. Liu, A. Zhu, F. Cai, L. Tao, Y. Zhou, Z. Zhao, Q. Chen, Y. Cheng and H. Zhou, J. Mater. Chem. A, 2017, Advance Article , DOI: 10.1039/C7TA01593C

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