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Synthesis, structure, and optoelectronic properties of II–IV–V2 materials

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Abstract

II–IV–V2 materials offer the promise of enhanced functionality in optoelectronic devices due to their rich ternary chemistry. In this review, we consider the potential for new optoelectronic devices based on nitride, phosphide, and arsenide II–IV–V2 materials. As ternary analogs to the III–V materials, these compounds share many of the attractive features that have made the III–Vs the basis of modern optoelectronic devices (e.g. high mobility, strong optical absorption). Control of cation order parameter in the II–IV–V2 materials can produce significant changes in optoelectronic properties at fixed chemical composition, including decoupling band gap from lattice parameter. Recent progress has begun to resolve outstanding questions concerning the structure, dopability, and optical properties of the II–IV–V2 materials. Remaining research challenges include growth optimization and integration into heterostructures and devices.

Graphical abstract: Synthesis, structure, and optoelectronic properties of II–IV–V2 materials

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Publication details

The article was received on 12 Jan 2017, accepted on 07 Mar 2017, published on 07 Mar 2017 and first published online on 07 Mar 2017


Article type: Review Article
DOI: 10.1039/C7TA00406K
Citation: J. Mater. Chem. A, 2017, Advance Article
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    Synthesis, structure, and optoelectronic properties of II–IV–V2 materials

    A. D. Martinez, A. N. Fioretti, E. S. Toberer and A. C. Tamboli, J. Mater. Chem. A, 2017, Advance Article , DOI: 10.1039/C7TA00406K

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