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Issue 12, 2017
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Insight into the topological defects and dopants in metal-free holey graphene for triiodide reduction in dye-sensitized solar cells

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Abstract

Exploiting highly active and stable counter electrodes (CEs) has been a persistent challenge for the practical application of dye-sensitized solar cells (DSSCs). Herein, we present an edge-enhanced modification to fabricate nitrogen doped holey graphene (NHG) by rationally employing N2 plasma treatment at the exposed edge sites of holey graphene. The as-synthesized NHG exhibits a highly conductive and unique holey scaffold with a large surface area, along with abundant edge-induced topological defects and nitrogen dopants. Benefiting from such unique features, NHG exhibits outstanding electrocatalytic activity and high electrochemical stability for the Iāˆ’/I3āˆ’ redox reaction. Furthermore, density functional theory calculations are performed to further elucidate the underlying mechanism behind this encouraging performance, in particular the effect of edge-induced topological defects. The DSSCs based on NHG CEs display a power conversion efficiency of 9.07%, which is even superior to that of Pt (8.19%). These results strongly indicate possibilities for the large-scale fabrication of low-cost and metal-free NHG materials for DSSCs with an I-complex redox couple.

Graphical abstract: Insight into the topological defects and dopants in metal-free holey graphene for triiodide reduction in dye-sensitized solar cells

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Publication details

The article was received on 09 Jan 2017, accepted on 20 Feb 2017 and first published on 21 Feb 2017


Article type: Paper
DOI: 10.1039/C7TA00278E
Citation: J. Mater. Chem. A, 2017,5, 5952-5960
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    Insight into the topological defects and dopants in metal-free holey graphene for triiodide reduction in dye-sensitized solar cells

    W. Yang, X. Xu, L. Hou, X. Ma, F. Yang, Y. Wang and Y. Li, J. Mater. Chem. A, 2017, 5, 5952
    DOI: 10.1039/C7TA00278E

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