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Issue 1, 2017
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The effect of Mg-doping and Cu nonstoichiometry on the photoelectrochemical response of CuFeO2

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Abstract

We report the tuning of CuFeO2 photoelectrodes by Mg doping and Cu deficiency to demonstrate the effects of carrier concentration on the photoresponse. Carrier type and concentration were quantitatively assessed using the Hall effect on pure, Mg-incorporated, and Cu-deficient pellets (CuFe1−xMgxO2 and Cu1−yFeO2, x = 0, 0.0005, 0.005, 0.02, and y = 0.005, 0.02) over the range of thermodynamic stability achievable using solid-state synthesis. The same samples were used in a photoelectrochemical cell to measure their photoresponse. We find that the material with the lowest p-type carrier concentration and the highest carrier mobility shows the largest photoresponse. Furthermore, we show that increasing the p-type carrier concentration and thus the conductivity to high levels is limited by the delafossite defect chemistry, which changes the majority carrier type from p-type to n-type near the Mg solubility limit (x = 0.05) and at high Cu defect concentrations.

Graphical abstract: The effect of Mg-doping and Cu nonstoichiometry on the photoelectrochemical response of CuFeO2

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Publication details

The article was received on 29 Jul 2016, accepted on 12 Nov 2016 and first published on 14 Nov 2016


Article type: Paper
DOI: 10.1039/C6TA06504J
Citation: J. Mater. Chem. A, 2017,5, 165-171
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    The effect of Mg-doping and Cu nonstoichiometry on the photoelectrochemical response of CuFeO2

    A. Wuttig, J. W. Krizan, J. Gu, J. J. Frick, R. J. Cava and A. B. Bocarsly, J. Mater. Chem. A, 2017, 5, 165
    DOI: 10.1039/C6TA06504J

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