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Activation of particulate Ta3N5 water-oxidation photoanode with GaN hole-blocking layer

Abstract

Particulate Ta3N5, a visible-light responding material for photoelectrochemical O2 evolution, was glued to metallic conducting layer with GaN layer. The electrode exhibited 1.8 times higher efficiency of water oxidation than without GaN. The GaN layer can block the hole current from Ta3N5 to the back-contact metal layer, preventing hole-electron recombination.

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Publication details

The article was received on 16 Aug 2017, accepted on 13 Oct 2017 and first published on 13 Oct 2017


Article type: Communication
DOI: 10.1039/C7SE00402H
Citation: Sustainable Energy Fuels, 2017, Accepted Manuscript
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    Activation of particulate Ta3N5 water-oxidation photoanode with GaN hole-blocking layer

    Y. Asakura, T. Higashi, H. Nishiyama, H. Kobayashi, M. Nakabayashi, N. Shibata, T. Minegishi, T. Hisatomi, M. Katayama, T. Yamada and K. Domen, Sustainable Energy Fuels, 2017, Accepted Manuscript , DOI: 10.1039/C7SE00402H

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