Jump to main content
Jump to site search


Photoacid generator integrated terpolymer for electron beam lithography applications: sensitive resist with pattern transfer potential

Abstract

While developing a new resist for different lithography applications, starting from high to low nodes, the potential of the resist in successful pattern transfer has been the key for practical applications particularly in semiconductor industries. Although, semiconductor industries are looking for materials for sub 7 nm node technology for sophisticated electronic appliances, the materials with potential for high resolution larger node pattern transfer are equally important for specialized applications particularly in CMOS technology. In this regard, a new ionic photoacid generator included terpolymer photoresist viz GBLMA-MAMA-MAPDST has been synthesized for next generation lithography (NGL) applications. Electron beam lithography (EBL) studies of this resist coated thin films have shown that the resist can pattern 100 nm line/space features under e-beam exposure. Sensitivity (E0) and contrast (γ) were calculated to be 36.5 µC/cm2 and 0.08 respectively. Finally, transfer of 100 nm (line/space) patterns into silicon substrate has been achieved by dry plasma etching technique.

Back to tab navigation
Please wait while Download options loads

Supplementary files

Publication details

The article was received on 27 Mar 2017, accepted on 16 May 2017 and first published on 17 May 2017


Article type: Research Article
DOI: 10.1039/C7QM00140A
Citation: Mater. Chem. Front., 2017, Accepted Manuscript
  •   Request permissions

    Photoacid generator integrated terpolymer for electron beam lithography applications: sensitive resist with pattern transfer potential

    S. Nandi, M. Yogesh, P. G. P. Reddy, S. K. Sharma, C. P. Pradeep, S. Ghosh and K. E. Gonsalves, Mater. Chem. Front., 2017, Accepted Manuscript , DOI: 10.1039/C7QM00140A

Search articles by author