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Graphdiyne for multilevel flexible organic resistive random access memory devices

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Abstract

Graphdiyne (GD), a new carbon allotrope with a 2D structure comprising benzene rings and carbon–carbon triple bonds, is employed in fabricating resistive random access memory (RRAM) devices. On inserting a GD nanoparticle (NP) discontinuous layer and thermally depositing an Al–Al2O3 core–shell (Al–Al2O3) NP discontinuous layer in insulating polyimide (PI) films on a PET substrate, the designed flexible three-state memory device is realized (PET/Ag/PI/GD/PI/Al–Al2O3/PI/Al). GD NPs and Al–Al2O3 NPs function as two types of strong electron traps with different energy levels, resulting in two ON states. The OFF state and the two ON states possess long retention times of more than 104 s. Our results here demonstrate that GD could have great potential applications in future information storage technologies.

Graphical abstract: Graphdiyne for multilevel flexible organic resistive random access memory devices

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Publication details

The article was received on 11 Jan 2017, accepted on 30 Jan 2017 and first published on 06 Feb 2017


Article type: Research Article
DOI: 10.1039/C7QM00009J
Citation: Mater. Chem. Front., 2017, Advance Article
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    Graphdiyne for multilevel flexible organic resistive random access memory devices

    Z. Jin, Y. Chen, Q. Zhou, P. Mao, H. Liu, J. Wang and Y. Li, Mater. Chem. Front., 2017, Advance Article , DOI: 10.1039/C7QM00009J

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