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Issue 2, 2018
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Photoluminescence nonuniformity from self-seeding nuclei in CVD-grown monolayer MoSe2

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Abstract

We present optical spectroscopy (photoluminescence and Raman spectrum) studies of monolayer transition metal dichalcogenide MoSe2, with spatial location, temperature and excitation power dependence. The investigated spectra show location-dependent behavior with an increase in photoluminescence and Raman intensity and a blue-shift in photoluminescence peak position in the inner region. The observed behaviors of a large shift in the photoluminescence peak position at the edge and biexciton emissions in the inner region confirm that the monolayer MoSe2 crystals grow from nucleation centers during the CVD process. Temperature activated energy and dependence of the peak position are attributed to residual oxygen during the growth. Investigating this information provides a basis for precisely controlling the synthesis of TMDCs and their application in advanced optoelectronics.

Graphical abstract: Photoluminescence nonuniformity from self-seeding nuclei in CVD-grown monolayer MoSe2

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Publication details

The article was received on 20 Nov 2017, accepted on 06 Dec 2017 and first published on 06 Dec 2017


Article type: Paper
DOI: 10.1039/C7NR08662H
Citation: Nanoscale, 2018,10, 752-757
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    Photoluminescence nonuniformity from self-seeding nuclei in CVD-grown monolayer MoSe2

    X. Tian, R. Wei, S. Liu, Y. Zhang and J. Qiu, Nanoscale, 2018, 10, 752
    DOI: 10.1039/C7NR08662H

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