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Photoluminescence nonuniformity from self-seeding nuclei in CVD grown monolayer MoSe2

Abstract

Abstract: We present optical spectroscopy (photoluminescence and Raman spectrum) studies of monolayer transition metal dichalcogenide MoSe2, with spatial location, temperature and excitation power dependence. The investigated spectra show location-dependent behavior with an increase in photoluminescence and Raman intensity and a blue-shift in photoluminescence peak position in the inner region. The observed behaviors of a large shift for photoluminescence peak position in the edge and biexciton emissions in the inner confirm that the monolayer MoSe2 crystals grow from the nucleation centers during the CVD process. Temperature activated energy and dependence of peak position are attributed to residue oxygen during the growth. Investigating this information provide a basis for precise controlling the synthesis in TMDCs and the application in advanced optoelectronic.

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Publication details

The article was received on 20 Nov 2017, accepted on 06 Dec 2017 and first published on 06 Dec 2017


Article type: Paper
DOI: 10.1039/C7NR08662H
Citation: Nanoscale, 2017, Accepted Manuscript
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    Photoluminescence nonuniformity from self-seeding nuclei in CVD grown monolayer MoSe2

    X. Tian, R. Wei, S. Liu, Y. Zhang and J. Qiu, Nanoscale, 2017, Accepted Manuscript , DOI: 10.1039/C7NR08662H

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