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Issue 45, 2017
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Facile solvothermal approach to pristine tetrahedrite nanostructures with unique multiply-voided morphology

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Abstract

Tetrahedrite (Cu12Sb4S13) is a highly promising environmentally friendly material for energy conversion applications but its synthesis generally requires several days of heating at high temperature conditions. To fabricate tetrahedrite in a more rapid way and under milder conditions, solvothermal synthesis has been recently explored. However, a common problem faced when using this technique is the formation of significant amounts of other ternary Cu–Sb–S phases along with the desired tetrahedrite phase. Here, we present an optimized solvothermal procedure for synthesizing high-purity samples of tetrahedrite at moderate temperatures and reasonable heating times. The as-prepared samples are single-crystalline nanometer-sized structures having multiple voids or pores. By modifying certain experimental parameters such as the reaction temperature and heating time, we have shown that we can alter the nanocrystal architecture. The formation mechanism was investigated and it was found that these porous tetrahedrite nanostructures are a product of the non-classical oriented aggregation growth process. Porosity in nanomaterials is known to improve material properties and is desirable in many important applications so the construction of void-containing tetrahedrite nanostructures will potentially extend the utility of tetrahedrite to a wider range of applications. In this work, we explore its possible use as a photothermal-responsive drug delivery vehicle.

Graphical abstract: Facile solvothermal approach to pristine tetrahedrite nanostructures with unique multiply-voided morphology

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Publication details

The article was received on 14 Oct 2017, accepted on 03 Nov 2017 and first published on 03 Nov 2017


Article type: Paper
DOI: 10.1039/C7NR07652E
Citation: Nanoscale, 2017,9, 17865-17876
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    Facile solvothermal approach to pristine tetrahedrite nanostructures with unique multiply-voided morphology

    M. D. Regulacio, S. Y. Tee, S. H. Lim, C. P. Teng, L. Koh, S. Liu and M. Han, Nanoscale, 2017, 9, 17865
    DOI: 10.1039/C7NR07652E

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