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Effects of rhenium dopants on photocarrier dynamics and optical properties of monolayer, few-layer, and bulk MoS2

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Abstract

We report a comprehensive study on the effects of rhenium doping on optical properties and photocarrier dynamics of MoS2 monolayer, few-layer, and bulk samples. Monolayer and few-layer samples of Re-doped (0.6%) and undoped MoS2 were fabricated by mechanical exfoliation, and were studied by Raman spectroscopy, optical absorption, photoluminescence, and time-resolved differential reflection measurements. Similar Raman, absorption, and photoluminescence spectra were obtained from doped and undoped samples, indicating that the Re doping at this level does not significantly alter the lattice and electronic structures. Red-shift and broadening of the two phonon Raman modes were observed, showing the lattice strain and carrier doping induced by Re. The photoluminescence yield of the doped monolayer is about 15 times lower than that of the undoped sample, while the photocarrier lifetime is about 20 times shorter in the doped monolayer. Both observations can be attributed to diffusion-limited Auger nonradiative recombination of photocarriers at Re dopants. These results provide useful information for developing a doping strategy of MoS2 for optoelectronic applications.

Graphical abstract: Effects of rhenium dopants on photocarrier dynamics and optical properties of monolayer, few-layer, and bulk MoS2

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Publication details

The article was received on 28 Sep 2017, accepted on 20 Nov 2017 and first published on 21 Nov 2017


Article type: Paper
DOI: 10.1039/C7NR07227A
Citation: Nanoscale, 2017, Advance Article
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    Effects of rhenium dopants on photocarrier dynamics and optical properties of monolayer, few-layer, and bulk MoS2

    Y. Li, Q. Liu, Q. Cui, Z. Qi, J. Z. Wu and H. Zhao, Nanoscale, 2017, Advance Article , DOI: 10.1039/C7NR07227A

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