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Homo-endotaxial one-dimensional Si nanostructures

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Abstract

One-dimensional (1D) nanostructures are highly sought after, both for their novel electronic properties as well as for their improved functionality. However, due to their nanoscale dimensions, these properties are significantly affected by the environment in which they are embedded. In this paper, we report on the creation of 1D homo-endotaxial Si nanostructures, i.e. 1D Si nanostructures with a lattice structure that is uniquely different from the Si diamond lattice in which they are embedded. We use scanning tunneling microscopy and spectroscopy, scanning transmission electron microscopy, density functional theory, and conductive atomic force microscopy to elucidate their formation and properties. Depending on kinetic constraints during growth, they can be prepared as endotaxial 1D Si nanostructures completely embedded in crystalline Si, or underneath a stripe of amorphous Si containing a large concentration of Bi atoms. These homo-endotaxial 1D Si nanostructures have the potential to be useful components in nanoelectronic devices based on the technologically mature Si platform.

Graphical abstract: Homo-endotaxial one-dimensional Si nanostructures

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Publication details

The article was received on 18 Sep 2017, accepted on 26 Nov 2017 and first published on 29 Nov 2017


Article type: Paper
DOI: 10.1039/C7NR06968E
Citation: Nanoscale, 2017, Advance Article
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    Homo-endotaxial one-dimensional Si nanostructures

    J. Song, B. M. Hudak, H. Sims, Y. Sharma, T. Z. Ward, S. T. Pantelides, A. R. Lupini and P. C. Snijders, Nanoscale, 2017, Advance Article , DOI: 10.1039/C7NR06968E

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