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Intrinsic anionic rearrangement by extrinsic control: Transition of RS and CRS in thermally elevated TiN/HfO2/Pt RRAM

Abstract

Sneak path problem is one of the major hindrances for the application of high-density crossbar resistive random access memory. Complementary resistive switching (CRS) is an effective solutions to that problem. Co-existence of resistive switching (RS) and CRS is possible within the same device. Therefore, a precise control is much required for the successful utilization of different modes. In this work, we have demonstrated an effective way to control both the switching modes in a simple HfO2 based crossbar device. The interchange between RS and CRS modes are possible based on the intrinsic anionic rearrangement by controlling the extrinsic stimulation either in the form of voltage or in the form of current. In particular, a highly nonlinear CRS mode is reported, in which the nonlinearity is almost 100 times higher than the RS mode, which is achieved at a high temperature of 150oC. The procedure reported in this study may be useful for the other resistive memory systems.

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Publication details

The article was received on 06 Sep 2017, accepted on 10 Nov 2017 and first published on 13 Nov 2017


Article type: Paper
DOI: 10.1039/C7NR06628G
Citation: Nanoscale, 2017, Accepted Manuscript
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    Intrinsic anionic rearrangement by extrinsic control: Transition of RS and CRS in thermally elevated TiN/HfO2/Pt RRAM

    W. Banerjee, W. F. Cai, X. Zhao, Q. Liu, H. Lv, S. Long and M. Liu, Nanoscale, 2017, Accepted Manuscript , DOI: 10.1039/C7NR06628G

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