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Issue 44, 2017
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Two-dimensional transition-metal dichalcogenides-based ferromagnetic van der Waals heterostructures

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Abstract

The lack of ferromagnetic (FM) van der Waals (vdW) heterostructures hinders the application of two-dimensional (2D) materials in spintronics, information memories and storage devices. Herein, we find theoretically that 2D transition-metal dichalcogenides-based vdW heterostructures, such as MoS2/VS2 and WS2/VS2, possess excellent characteristics of stable stacking configurations, FM semiconducting ground states, high Curie temperatures, staggered band alignment and a large band offset. Fortunately, 100% spin-polarized currents at the Fermi level can be achieved under certain positive external electric fields, which can filter the current into a single spin channel. Moreover, the majority channel undergoes the transition from type-II to type-I (type-III) band alignment under the negative (positive) electric field; while the band alignment of the minority channel is robust to the electric field. Our results provide a feasible way to realize 2D TMDs-based FM semiconducting heterostructures for spintronic devices.

Graphical abstract: Two-dimensional transition-metal dichalcogenides-based ferromagnetic van der Waals heterostructures

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Publication details

The article was received on 31 Aug 2017, accepted on 24 Oct 2017 and first published on 25 Oct 2017


Article type: Paper
DOI: 10.1039/C7NR06473J
Citation: Nanoscale, 2017,9, 17585-17592
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    Two-dimensional transition-metal dichalcogenides-based ferromagnetic van der Waals heterostructures

    J. Du, C. Xia, W. Xiong, T. Wang, Y. Jia and J. Li, Nanoscale, 2017, 9, 17585
    DOI: 10.1039/C7NR06473J

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