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Issue 44, 2017
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Characterization of the superlattice region of a quantum cascade laser by secondary ion mass spectrometry

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Abstract

Secondary ion mass spectrometry is applied to the depth profiling of the superlattice active region of lattice matched (∼9.2 μm) Al0.48In0.52As/In0.53Ga0.47As/InP quantum cascade lasers. The developed measurement procedure is capable of characterizing the quality of each individual layer in the superlattice region, including layers as thin as 0.7 nm. The oxygen level for AlInAs and InGaAs layers is in the range of 1–3 × 1017 atms per cm3 and below the detection limit (∼1 × 1016 atms per cm3), respectively. Oxygen is not uniformly distributed in the AlInAs layers – more oxygen is embedded into the structure during the very first stage of the growth of the AlInAs layer and thus the corresponding interface is 1.83 ± 0.31 times more contaminated than the other. The procedure can also be operated in 3D imaging mode which proves to be invaluable for failure analysis.

Graphical abstract: Characterization of the superlattice region of a quantum cascade laser by secondary ion mass spectrometry

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Publication details

The article was received on 28 Aug 2017, accepted on 17 Oct 2017 and first published on 18 Oct 2017


Article type: Paper
DOI: 10.1039/C7NR06401B
Citation: Nanoscale, 2017,9, 17571-17575
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    Characterization of the superlattice region of a quantum cascade laser by secondary ion mass spectrometry

    P. P. Michałowski, P. Gutowski, D. Pierścińska, K. Pierściński, M. Bugajski and W. Strupiński, Nanoscale, 2017, 9, 17571
    DOI: 10.1039/C7NR06401B

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