Jump to main content
Jump to site search

Issue 48, 2017
Previous Article Next Article

Multiple polarization states in symmetric ferroelectric heterostructures for multi-bit non-volatile memories

Author affiliations

Abstract

Here we report a ferroelectric capacitor structure obtained by alternating ferroelectric and insulator thin-film layers which allows an increase of up to 2n polarization states, with n the number of ferroelectric layers. Four and up to eight distinct, stable and independently addressed polarization states are experimentally demonstrated in this work. The experimental findings are supported by a theoretical model based on the Landau–Ginzburg–Devonshire theory. The key parameter is the change in the strain conditions of ferroelectric layers induced by the insulating separator. Notably, the 2n increase in the storage capacity can be achieved without major changes in the present technology used for FeRAM devices. The test structures demonstrate very good memory characteristics such as retention and fatigue, opening the way towards the design of high density ferroelectric memories.

Graphical abstract: Multiple polarization states in symmetric ferroelectric heterostructures for multi-bit non-volatile memories

Back to tab navigation

Supplementary files

Publication details

The article was received on 25 Aug 2017, accepted on 24 Nov 2017 and first published on 24 Nov 2017


Article type: Paper
DOI: 10.1039/C7NR06354G
Citation: Nanoscale, 2017,9, 19271-19278
  •   Request permissions

    Multiple polarization states in symmetric ferroelectric heterostructures for multi-bit non-volatile memories

    G. A. Boni, L. D. Filip, C. Chirila, I. Pasuk, R. Negrea, I. Pintilie and L. Pintilie, Nanoscale, 2017, 9, 19271
    DOI: 10.1039/C7NR06354G

Search articles by author

Spotlight

Advertisements