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Issue 40, 2017
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Heterostructured ZnS/InP nanowires for rigid/flexible ultraviolet photodetectors with enhanced performance

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Abstract

Heterostructured ZnS/InP nanowires, composed of single-crystalline ZnS nanowires coated with a layer of InP shell, were synthesized via a one-step chemical vapor deposition process. As-grown heterostructured ZnS/InP nanowires exhibited an ultrahigh Ion/Ioff ratio of 4.91 × 103, a high photoconductive gain of 1.10 × 103, a high detectivity of 1.65 × 1013 Jones and high response speed even in the case of very weak ultraviolet light illumination (1.87 μW cm−2). The values are much higher than those of previously reported bare ZnS nanowires owing to the formation of core/shell heterostructures. Flexible ultraviolet photodetectors were also fabricated with the heterostructured ZnS/InP nanowires, which showed excellent mechanical flexibility, electrical stability and folding endurance besides excellent photoresponse properties. The results elucidated that the heterostructured ZnS/InP nanowires could find good applications in next generation flexible optoelectronic devices.

Graphical abstract: Heterostructured ZnS/InP nanowires for rigid/flexible ultraviolet photodetectors with enhanced performance

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Publication details

The article was received on 17 Aug 2017, accepted on 07 Sep 2017 and first published on 07 Sep 2017


Article type: Paper
DOI: 10.1039/C7NR06118H
Citation: Nanoscale, 2017,9, 15416-15422
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    Heterostructured ZnS/InP nanowires for rigid/flexible ultraviolet photodetectors with enhanced performance

    K. Zhang, J. Ding, Z. Lou, R. Chai, M. Zhong and G. Shen, Nanoscale, 2017, 9, 15416
    DOI: 10.1039/C7NR06118H

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