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First principle investigation of Tunnel FET based on nanoribbons from topological two-dimensional material

Abstract

We explore nanoribbons from topological two-dimensional stanene as channel material in tunnel field effect transistors. This novel technological option offers the possibility to build pure one- dimensional (1D) channel devices (comprised of a 1D chain of atoms) due to localized states in correspondence of the nanoribbon edges. The investigation is based on first-principle calculations and multi-scale transport simulations to assess devices performance against industry requirements and their robustness with respect to technological issues like line edge roughness, detrimental for nanoribbons. We will show that edges states are robust with respect to the presence of non- idealities (e.g., atoms vacancies at the edges), and that 1D-channel TFETs exhibit interesting potential for digital applications and room for optimization in order to improve the Ion /Ioff at the levels required by the ITRS, while opening a path for the exploration of new device concepts at the ultimate scaling limits.

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Publication details

The article was received on 14 Aug 2017, accepted on 09 Nov 2017 and first published on 14 Nov 2017


Article type: Paper
DOI: 10.1039/C7NR06015G
Citation: Nanoscale, 2017, Accepted Manuscript
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    First principle investigation of Tunnel FET based on nanoribbons from topological two-dimensional material

    E. G. Marin, D. Marian, G. Iannaccone and G. Fiori, Nanoscale, 2017, Accepted Manuscript , DOI: 10.1039/C7NR06015G

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