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Issue 44, 2017
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Manipulating the quantum interference effect and magnetotransport of ZnO nanowires through interfacial doping

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Abstract

We carefully prepared interfacial Al-doped (IAD) and interfacial natively-doped (IND) ZnO nanowires (NWs) by introducing atomic-layer interfacial Δ-doping between the two steps of CVD growth. Variable-temperature electron transport as well as magnetotransport behaviours of these NWs were systematically investigated. By virtue of the unique architecture and the quality-guaranteed growth technique, a series of quantum interference effects were clearly observed in the IAD ZnO NWs, including weak localization, universal conductance fluctuation and Altshuler–Aronov–Spivak oscillations. The phase-coherence length (Lφ) of electrons exceeds 100 nm in the IAD ZnO NWs, much longer than those in the IND ones and most conventionally doped ZnO NWs. This ability to efficiently manipulate a variety of quantum interference effects in ZnO NWs is very desirable for applications in nano-optoelectronics, nano- & quantum-electronics and solid-state quantum computing.

Graphical abstract: Manipulating the quantum interference effect and magnetotransport of ZnO nanowires through interfacial doping

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Publication details

The article was received on 11 Aug 2017, accepted on 18 Oct 2017 and first published on 19 Oct 2017


Article type: Paper
DOI: 10.1039/C7NR05917E
Citation: Nanoscale, 2017,9, 17610-17616
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    Manipulating the quantum interference effect and magnetotransport of ZnO nanowires through interfacial doping

    S. Zhao, Y. Wu, K. Zhang, H. Ding, D. Du, J. Zhao, N. Pan and X. Wang, Nanoscale, 2017, 9, 17610
    DOI: 10.1039/C7NR05917E

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