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Issue 48, 2017
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Observation of A1g Raman mode splitting in few layer black phosphorus encapsulated with hexagonal boron nitride

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Abstract

We investigate the impact of encapsulation with hexagonal boron nitride (h-BN) on the Raman spectrum of few layer black phosphorus. The encapsulation results in a significant reduction of the line width of the Raman modes of black phosphorus, due to a reduced phonon scattering rate. We observe a so far elusive peak in the Raman spectra ∼4 cm−1 above the A1g mode in trilayer and thicker flakes, which had not been observed experimentally. The newly observed mode originates from the strong black phosphorus inter-layer interaction, which induces a hardening of the surface atom vibration with respect to the corresponding modes of the inner layers. The observation of this mode suggests a significant impact of h-BN encapsulation on the properties of black phosphorus and can serve as an indicator of the quality of its surface.

Graphical abstract: Observation of A1g Raman mode splitting in few layer black phosphorus encapsulated with hexagonal boron nitride

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Publication details

The article was received on 29 Jul 2017, accepted on 08 Nov 2017 and first published on 14 Nov 2017


Article type: Paper
DOI: 10.1039/C7NR05588A
Citation: Nanoscale, 2017,9, 19298-19303
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    Observation of A1g Raman mode splitting in few layer black phosphorus encapsulated with hexagonal boron nitride

    J. M. Urban, M. Baranowski, A. Surrente, D. Wlodarczyk, A. Suchocki, G. Long, Y. Wang, L. Klopotowski, N. Wang, D. K. Maude and P. Plochocka, Nanoscale, 2017, 9, 19298
    DOI: 10.1039/C7NR05588A

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