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Observation of A$_g^1$ Raman mode splitting in few layers black phosphorus encapsulated with hexagonal boron nitride

Abstract

We investigate the impact of the encapsulation with hexagonal boron nitride (h-BN) on the Raman spectrum of few layer black phosphorus. The encapsulation results in a significant reduction of the line width of the Raman modes of black phosphorus, due to a reduced phonon scattering rate. We observe a so far elusive peak in the Raman spectra $\sim$4cm$^{-1}$ above the A$_{\text{g}}^1$ mode in trilayer and thicker flakes, which had not been observed experimentally. The newly observed mode originates from the strong black phosphorus inter-layer interaction, which induces a hardening of the surface atoms vibration with respect to the corresponding modes of the inner layers. The observation of this mode suggests a significant impact of h-BN encapsulation on the properties of black phosphorus and can serve as an indicator of the quality of its surface.

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Publication details

The article was received on 29 Jul 2017, accepted on 08 Nov 2017 and first published on 14 Nov 2017


Article type: Paper
DOI: 10.1039/C7NR05588A
Citation: Nanoscale, 2017, Accepted Manuscript
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    Observation of A$_g^1$ Raman mode splitting in few layers black phosphorus encapsulated with hexagonal boron nitride

    J. Urban, M. Baranowski, A. Surrente, D. R. Wlodarczyk, A. Suchocki, G. Long, Y. Wang, Ł. Kłopotowski, N. Wang, D. K. Maude and P. Plochocka, Nanoscale, 2017, Accepted Manuscript , DOI: 10.1039/C7NR05588A

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