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Ferroelectric control of Rashba spin orbit coupling at the GeTe(111)/InP(111) interface

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Abstract

GeTe is a prototypical compound of a new class of multifunctional materials, i.e., ferroelectric Rashba semiconductors (FRS). In the present work, by combining the first-principles calculations and Rashba model analysis, we reexamine Rashba spin–orbit coupling (SOC) in a GeTe(111) crystal and clarify its linear Rashba SOC strength. We further investigate Rashba SOC at the interface of a GeTe(111)/InP(111) superlattice and demonstrate the ferroelectric manipulation of Rashba SOC in detail. A large modulation of Rashba SOC is obtained, and surprisingly, we find that Rashba SOC does not monotonically increase with the increase of ferroelectric displacement, due to the parabola opening reversal of Rashba splitting bands. In addition, a reversal of the spin texture is realized by tuning the ferroelectric polarization. Our investigation provides a deep insight into the ferroelectric control of Rashba SOC, which is of great importance in FRS spin field effect transistors.

Graphical abstract: Ferroelectric control of Rashba spin orbit coupling at the GeTe(111)/InP(111) interface

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Publication details

The article was received on 28 Jul 2017, accepted on 25 Oct 2017 and first published on 25 Oct 2017


Article type: Paper
DOI: 10.1039/C7NR05550A
Citation: Nanoscale, 2017, Advance Article
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    Ferroelectric control of Rashba spin orbit coupling at the GeTe(111)/InP(111) interface

    Y. Meng, W. Bai, H. Gao, S. Gong, J. Wang, C. Duan and J. Chu, Nanoscale, 2017, Advance Article , DOI: 10.1039/C7NR05550A

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