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Issue 46, 2017
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Atomic layer MoS2-graphene van der Waals heterostructure nanomechanical resonators

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Abstract

Heterostructures play significant roles in modern semiconductor devices and micro/nanosystems in a plethora of applications in electronics, optoelectronics, and transducers. While state-of-the-art heterostructures often involve stacks of crystalline epi-layers each down to a few nanometers thick, the intriguing limit would be hetero-atomic-layer structures. Here we report the first experimental demonstration of freestanding van der Waals heterostructures and their functional nanomechanical devices. By stacking single-layer (1L) MoS2 on top of suspended single-, bi-, tri- and four-layer (1L to 4L) graphene sheets, we realize an array of MoS2-graphene heterostructures with varying thickness and size. These heterostructures all exhibit robust nanomechanical resonances in the very high frequency (VHF) band (up to ∼100 MHz). We observe that fundamental-mode resonance frequencies of the heterostructure devices fall between the values of graphene and MoS2 devices. Quality (Q) factors of heterostructure resonators are lower than those of graphene but comparable to those of MoS2 devices, suggesting interface damping related to interlayer interactions in the van der Waals heterostructures. This study validates suspended atomic layer heterostructures as an effective device platform and provides opportunities for exploiting mechanically coupled effects and interlayer interactions in such devices.

Graphical abstract: Atomic layer MoS2-graphene van der Waals heterostructure nanomechanical resonators

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Publication details

The article was received on 08 Jul 2017, accepted on 01 Oct 2017 and first published on 03 Oct 2017


Article type: Communication
DOI: 10.1039/C7NR04940D
Citation: Nanoscale, 2017,9, 18208-18215
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    Atomic layer MoS2-graphene van der Waals heterostructure nanomechanical resonators

    F. Ye, J. Lee and P. X.-L. Feng, Nanoscale, 2017, 9, 18208
    DOI: 10.1039/C7NR04940D

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