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Atomic Layer MoS2-Graphene van der Waals Heterostructure Nanomechanical Resonators

Abstract

Heterostructures play significant roles in modern semiconductor devices and micro/nanosystems in a plethora of applications in electronics, optoelectronics, and transducers. While state-of-the-art heterostructures often involve stacks of crystalline epi-layers down to a few tens to a few nanometer thick, the intriguing limit would be heterto-atomic-layer structures. Here we report the first experimental demonstration of freestanding van der Waals heterostructures and their functional nanomechanical devices. By stacking single-layer (1L) MoS2 on top of suspended single-, bi-, tri- and four-layer (1L to 4L) graphene sheets, we realize array of MoS2-graphene heterostructures with varying thickness and sizes. These heterostructures all exhibit robust nanomechanical resonances in the very high frequency (VHF) band (up to ~100 MHz). We observe that fundamental frequencies of the heterostructure devices fall between the values of graphene and MoS2. Quality (Q) factors of heterostructure resonators are lower than those of graphene but comparable to those of MoS2 devices, suggesting interface damping related to interlayer interactions in the van der Waals heterostructures. This study validates suspended atomic layer heterostructures as an effective device platform and opens opportunities for exploiting mechanically coupled effects and interlayer interactions in such devices.

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Supplementary files

Publication details

The article was received on 08 Jul 2017, accepted on 01 Oct 2017 and first published on 03 Oct 2017


Article type: Communication
DOI: 10.1039/C7NR04940D
Citation: Nanoscale, 2017, Accepted Manuscript
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    Atomic Layer MoS2-Graphene van der Waals Heterostructure Nanomechanical Resonators

    F. Ye, J. Lee and P. Feng, Nanoscale, 2017, Accepted Manuscript , DOI: 10.1039/C7NR04940D

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