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Unexpected Formation of Hierarchical Structure in Ternary InGaAs nanowires via “One-Pot” Growth

Abstract

The optoelectronic application of semiconductor nanowires largely depends on their nanostructures and related chemical characteristics. Although the spontaneously formed core-shell structure in ternary nanowires makes them often unpredictable, such versatile growth with varied chemical characteristics may open up opportunities for widening their applications. In this study, we present extraordinary phenomena observed during ternary InGaAs nanowires growth by molecular beam epitaxy. It was unexpectedly found that nanowires spontaneously formed the hierarchical structure during the growth: pure core structure at nanowires tip, core-shell structure at middle and core-multishell structure at bottom regions. By careful electron microscopy investigations on nanowires growth at the early stages, the growth mechanism of such unique hierarchical structure was unveiled. This study provides new insights for ternary III-V nanowires growth with the hope of assistance in designing new nanomaterials and nanostructures for future optoelectronic devices.

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Publication details

The article was received on 26 Jun 2017, accepted on 02 Oct 2017 and first published on 04 Oct 2017


Article type: Paper
DOI: 10.1039/C7NR04606E
Citation: Nanoscale, 2017, Accepted Manuscript
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    Unexpected Formation of Hierarchical Structure in Ternary InGaAs nanowires via “One-Pot” Growth

    C. Zhou, K. Zheng, P. Chen, W. Lu and J. Zou, Nanoscale, 2017, Accepted Manuscript , DOI: 10.1039/C7NR04606E

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