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InP–InxGa1−xAs core-multi-shell nanowire quantum wells with tunable emission in the 1.3–1.55 μm wavelength range

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Abstract

The usability and tunability of the essential InP–InGaAs material combination in nanowire-based quantum wells (QWs) are assessed. The wurtzite phase core-multi-shell InP–InGaAs–InP nanowire QWs are characterised using cross-section transmission electron microscopy and photoluminescence measurements. The InP–InGaAs direct interface is found to be sharp while the InGaAs–InP inverted interface is more diffused, in agreement with their planar counterpart. Bright emission is observed from the single nanowires containing the QWs at room temperature, with no emission from the InP core or outer barrier. The tunability of the QW emission wavelength in the 1.3–1.55 μm communication wavelength range is demonstrated by varying the QW thickness and in the 1.3 μm range by varying the composition. The experiments are supported by simulation of the emission wavelength of the wurtzite phase InP–InGaAs QWs in the thickness range considered. The radial heterostructure is further extended to design multiple QWs with bright emission, therefore establishing the capability of this material system for nanowire based optical devices for communication applications.

Graphical abstract: InP–InxGa1−xAs core-multi-shell nanowire quantum wells with tunable emission in the 1.3–1.55 μm wavelength range

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Publication details

The article was received on 25 Jun 2017, accepted on 15 Aug 2017 and first published on 16 Aug 2017


Article type: Paper
DOI: 10.1039/C7NR04598K
Citation: Nanoscale, 2017, Advance Article
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    InP–InxGa1−xAs core-multi-shell nanowire quantum wells with tunable emission in the 1.3–1.55 μm wavelength range

    H. A. Fonseka, A. S. Ameruddin, P. Caroff, D. Tedeschi, M. De Luca, F. Mura, Y. Guo, M. Lysevych, F. Wang, H. H. Tan, A. Polimeni and C. Jagadish, Nanoscale, 2017, Advance Article , DOI: 10.1039/C7NR04598K

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