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Carrier scattering in quasi-free standing graphene on hexagonal boron nitride


Graphene, two-dimensional material with honeycomb lattice, has been promoted as a next generation material because of its ultrafast charge carriers and superior electrical properties. Hexagonal boron nitride (h-BN) is an insulator explored as an ideal substrate for graphene with lattice-matching. Using raido-frequency (RF) transmission measurement which provides specific characteristics of carrier scattering in device, we profoundly investigated the electrical property of quasi-free standing graphene on h-BN. The RF devices with graphene supported and encapsulated by h-BN were fabricated to analyze the RF signal under low temperature from 100 to 300 K. We demonstrated the carrier behavior in graphene with thermal excited carriers and acoustic photon scattering according to heat energy. Both of h-BN supported and encapsulated graphene showed significant enhancement in RF transmission, which is close to gold interconnector. Our device with graphene on h-BN exhibited concealed nonlinear characteristics at a specific temperature of 180 K due to internal effects of acoustic phonon scattering, while usual device with graphene on SiO2/Si provided linear variation. To anticipate the potential for electronic application, the electrical circuit properties such as impedance, resistance, and inductance were extracted from the results of RF measurement.

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Publication details

The article was received on 24 Jun 2017, accepted on 13 Sep 2017 and first published on 14 Sep 2017

Article type: Paper
DOI: 10.1039/C7NR04571A
Citation: Nanoscale, 2017, Accepted Manuscript
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    Carrier scattering in quasi-free standing graphene on hexagonal boron nitride

    S. J. Kim, B. Park, S. H. Noh, H. S. Yoon, J. Oh, S. Yoo, K. Kang, B. HAN and S. C. Jun, Nanoscale, 2017, Accepted Manuscript , DOI: 10.1039/C7NR04571A

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