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The mechanism of indium-assisted growth of (In)GaN nanorods: eliminating nanorods coalescence by indium-enhanced atomic migration

Abstract

Both well vertically aligned and uniformly separated (In)GaN nanorods (NRs) are successfully grown on Si(111) substrates by plasma-assisted molecular beam epitaxy. Effects of supplied indium (In) flux on the morphology of (In)GaN NRs are investigated systematically. The scanning electron microscopy analysis and transmission electron microscopy measurement reveal that the presence of In flux can help to inhibit NR coalescence and obtain well-separated (In)GaN NRs. By increasing the supplied In flux, the densities of (In)GaN NRs are decreased, and the axial growth rates are increased. According to the energy dispersive X-ray spectrometry measurement and theoretical calculations, the increase of In content of the NRs enhances Ga diffusion on the NR sidewalls, which results in an increased axial growth rate. A kinetic In-assisted growth model for the well-separated (In)GaN NRs is therefore proposed. The model explains the presence of In flux not only reduce density of (In)GaN NRs due to the increased substrate surface migration of Ga adatoms at nucleation stage, but also lead to a remarkable enhancement of axial growth rate at growth stage. Consequently, the NR coalescence is significantly suppressed. The results provide a demonstration of obtaining well-separated (In)GaN NRs and open up further possibility of developing (In)GaN NR-based optoelectronic devices.

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Publication details

The article was received on 23 Jun 2017, accepted on 11 Oct 2017 and first published on 12 Oct 2017


Article type: Paper
DOI: 10.1039/C7NR04555G
Citation: Nanoscale, 2017, Accepted Manuscript
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    The mechanism of indium-assisted growth of (In)GaN nanorods: eliminating nanorods coalescence by indium-enhanced atomic migration

    Z. Xu, Y. Yu, J. Han, L. Wen, F. Gao, S. Zhang and G. Li, Nanoscale, 2017, Accepted Manuscript , DOI: 10.1039/C7NR04555G

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