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Issue 39, 2017
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High performance blue quantum dot light-emitting diodes employing polyethylenimine ethoxylated as the interfacial modifier

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Abstract

Efficient electron-injection into the emitting layer (EML) plays a pivotal role in the fabrication of high performance blue quantum dot light-emitting diodes (QLEDs). Herein, we reduce the electron-transporting barrier at the ITO/ETL (electron-transporting layer) interface from 0.7 eV to 0.4 eV by spin-coating a polyethylenimine ethoxylated (PEIE) film (8 nm) on the ITO substrate. Meanwhile, the electron-injection barrier was reduced from 0.5 to 0.1 eV at the ETL/QD interface by employing the incorporation of PEIE (0.1 wt%) into a ZnO layer. These above two interfacial modifications jointly decrease the electron barrier and make the electron transportation easier. As a result, the optimized QLEDs with the 460 nm emission peak exhibit a maximum external quantum efficiency (EQE) of 7.85%, which is enhanced by 1.4 fold compared with the reference device (5.68%). It is demonstrated that the facile interfacial modification by the organic polymer PEIE contributes to the fabrication of high-efficiency blue QLEDs.

Graphical abstract: High performance blue quantum dot light-emitting diodes employing polyethylenimine ethoxylated as the interfacial modifier

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Publication details

The article was received on 23 Jun 2017, accepted on 11 Sep 2017 and first published on 11 Sep 2017


Article type: Communication
DOI: 10.1039/C7NR04542E
Citation: Nanoscale, 2017,9, 14792-14797
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    High performance blue quantum dot light-emitting diodes employing polyethylenimine ethoxylated as the interfacial modifier

    Y. Shi, F. Liang, Y. Hu, M. Zhuo, X. Wang and L. Liao, Nanoscale, 2017, 9, 14792
    DOI: 10.1039/C7NR04542E

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