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Superior stability for perovskite solar cells with 20% efficiency using vacuum co-evaporation

Abstract

Chemical composition and film quality are two key figures of merit for large area high efficiency perovskite solar cells. Up to now, all research on mixed perovskites use solution-processing that is known for imperfect surface coverage and pin-holes generated during solvent evaporation, which execrably influence the stability and efficiency of perovskite solar cells. Herein, we report our development using a vacuum co-evaporation deposition method to fabricate pin-hole free cesium (Cs) substituted perovskite films with complete surface coverage. Apart from the simplified procedure, the present method also promises tunable band gap, reduced trap-state density and longer carrier lifetime, leading to solar cell efficiency as high as 20.13%, which is among the highest reported for planar perovskite solar cells. The splendid performance is attributed to superior merits of the Cs-substituted perovskite film including tunable band gap, reduced trap-state density and longer carrier lifetime. Moreover, the Cs-substituted perovskite device without encapsulation exhibits significantly higher stability in ambient air compared with the single-component counterpart. When the Cs-substitued perovskite solar cells stored in dark for one year, the PCE remains to 19.25%, degrading only 4.37% of initial efficiency. The excellent stability originates from reduced lattice constant and relaxed strain in perovskite lattice by incorporating Cs cations into the crystal lattice, as demonstrated by the positive peak shifts and reduced peak width in X-ray diffraction analysis.

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Publication details

The article was received on 22 Jun 2017, accepted on 02 Aug 2017 and first published on 03 Aug 2017


Article type: Communication
DOI: 10.1039/C7NR04501H
Citation: Nanoscale, 2017, Accepted Manuscript
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    Superior stability for perovskite solar cells with 20% efficiency using vacuum co-evaporation

    X. Zhu, D. Yang, R. Yang, B. Yang, Z. Yang, X. Ren, J. Zhang, J. Niu, J. Feng and S. F. Liu, Nanoscale, 2017, Accepted Manuscript , DOI: 10.1039/C7NR04501H

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