Jump to main content
Jump to site search

Issue 32, 2017
Previous Article Next Article

Chemical-doping-driven crossover from graphene to “ordinary metal” in epitaxial graphene grown on SiC

Author affiliations

Abstract

Atmospheric chemical doping can be used to modify the electronic properties of graphene. Here we report that the chemical atmospheric doping (derived from air, oxygen and water vapor) of low-carrier-density monolayer epitaxial graphene on SiC can be readily tuned by a simple low-temperature (T ≤ 450 K), in situ vacuum gentle heating method. Interestingly, such an approach allows, for the first time, the observation of a crossover from graphene (μt/μq ≈ 2) to an “ordinary metal” (μt/μq ≈ 1) with decreasing carrier density, where μt and μq are transport mobility and quantum mobility, respectively. In the low carrier density limit, our results are consistent with the theoretical prediction that μt is inversely proportional to charged impurity density. Our data also suggest that atmospheric chemical doping can be used to vary intervalley scattering in graphene which plays a crucial role in backward scattering events.

Graphical abstract: Chemical-doping-driven crossover from graphene to “ordinary metal” in epitaxial graphene grown on SiC

Back to tab navigation

Supplementary files

Publication details

The article was received on 11 Jun 2017, accepted on 12 Jul 2017 and first published on 18 Jul 2017


Article type: Paper
DOI: 10.1039/C7NR04155A
Citation: Nanoscale, 2017,9, 11537-11544
  •   Request permissions

    Chemical-doping-driven crossover from graphene to “ordinary metal” in epitaxial graphene grown on SiC

    C. Chuang, Y. Yang, S. Pookpanratana, C. A. Hacker, C. Liang and R. E. Elmquist, Nanoscale, 2017, 9, 11537
    DOI: 10.1039/C7NR04155A

Search articles by author

Spotlight

Advertisements