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Issue 37, 2017
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Scaling behavior of oxide-based electrothermal threshold switching devices

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Abstract

Materials exhibiting insulator to metal transition (IMT) and transition metal oxides showing threshold switching behavior are considered as promising candidates for selector devices for crossbar non-volatile memory application. In this study, we use an electrothermal model to simulate the behavior of nanoscale selectors based on several different functional oxides (TaOx, VO2 and NbO2). We extract the device characteristics, such as threshold voltage (VTH), leakage current, device temperature in the ON state, and the size of the conductive filament as a function of selector diameter and functional layer thickness. In addition, we benchmark these devices in a 1 selector/1 resistor (1S1R) cell with a generic phase change-like memory element. These findings provide an insight into how device performance changes with scaling and help with material selection and design of selectors.

Graphical abstract: Scaling behavior of oxide-based electrothermal threshold switching devices

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Publication details

The article was received on 31 May 2017, accepted on 23 Aug 2017 and first published on 24 Aug 2017


Article type: Paper
DOI: 10.1039/C7NR03865H
Citation: Nanoscale, 2017,9, 14139-14148
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    Scaling behavior of oxide-based electrothermal threshold switching devices

    D. Li, J. M. Goodwill, J. A. Bain and M. Skowronski, Nanoscale, 2017, 9, 14139
    DOI: 10.1039/C7NR03865H

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