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Phase formation of nanolaminated Mo2AuC and Mo2(Au1−xGax)2C by a substitutional reaction within Au-capped Mo2GaC and Mo2Ga2C thin films

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Abstract

Au-containing nanolaminated carbides Mo2AuC and Mo2(Au1−xGax)2C were synthesized by a thermally induced substitutional reaction in Mo2GaC and Mo2Ga2C, respectively. The Au substitution of the Ga layers in the structures was observed using cross-sectional high-resolution scanning transmission electron microscopy. Expansion of c lattice parameters was also observed in the Au-containing phases compared to the original phases. Energy dispersive spectroscopy detected residual Ga in Au-substituted layers of both phases with a peculiar Ga in-plane ordering for Au : Ga = 9 : 1 ratio along the Au–Ga layers in Mo2(Au1−xGax)2C. These results indicate a generalization of the Au substitution reaction for the A elements in MAX phases.

Graphical abstract: Phase formation of nanolaminated Mo2AuC and Mo2(Au1−xGax)2C by a substitutional reaction within Au-capped Mo2GaC and Mo2Ga2C thin films

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Publication details

The article was received on 23 May 2017, accepted on 22 Oct 2017 and first published on 23 Oct 2017


Article type: Communication
DOI: 10.1039/C7NR03663A
Citation: Nanoscale, 2017, Advance Article
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    Phase formation of nanolaminated Mo2AuC and Mo2(Au1−xGax)2C by a substitutional reaction within Au-capped Mo2GaC and Mo2Ga2C thin films

    C. Lai, H. Fashandi, J. Lu, J. Palisaitis, P. O. Å. Persson, L. Hultman, P. Eklund and J. Rosen, Nanoscale, 2017, Advance Article , DOI: 10.1039/C7NR03663A

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