Jump to main content
Jump to site search


Programmable graphene doping via electron beam irradiation

Author affiliations

Abstract

Graphene is a promising candidate to succeed silicon based devices, and the conventional strategies for fabrication and testing of graphene-based electronics often utilise an electron beam. Here, we report on a systematic study of the effect of electron beam exposure on graphene devices. We realise reversible doping of on-chip graphene using a focused electron beam. Our results demonstrate site-specific control of carrier type and concentration achievable by modulating the charge distribution in the substrate. The effect of substrate-embedded charges on carrier mobility and conductivity of graphene is studied, with a dielectric screening model proposed to explain the effective n-type and p-type doping produced at different beam energies. Multiple logic operations are thus implemented in a single graphene sheet by using site-specific e-beam irradiation. We extend the phenomenon to MoS2, generalising it to conductive two-dimensional materials. Our results are of importance to imaging, in situ characterisation and lithographic techniques employed to investigate 2D materials.

Graphical abstract: Programmable graphene doping via electron beam irradiation

Back to tab navigation

Supplementary files

Publication details

The article was received on 15 May 2017, accepted on 04 Jun 2017 and first published on 07 Jun 2017


Article type: Paper
DOI: 10.1039/C7NR03446F
Citation: Nanoscale, 2017, Advance Article
  •   Request permissions

    Programmable graphene doping via electron beam irradiation

    Y. Zhou, J. Jadwiszczak, D. Keane, Y. Chen, D. Yu and H. Zhang, Nanoscale, 2017, Advance Article , DOI: 10.1039/C7NR03446F

Search articles by author

Spotlight

Advertisements