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Enhanced current rectification and self-powered photoresponse in multilayer p-MoTe2/n-MoS2 van der Waals heterojunctions

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Abstract

Vertically stacked van der Waals (vdW) heterojunctions based on two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted a great deal of attention and have created a powerful new material platform for novel, high-performance electronic and optoelectronic devices. Here, we report the construction of multilayer p-MoTe2/n-MoS2 vdW heterostructures with remarkable rectification behavior, self-powered photoresponse and distinct photosensitivity at different laser wavelengths and power densities. Field effect transistors (FETs) fabricated by MoTe2/MoS2 heterojunctions exhibit excellent gate-tunable rectification behavior and p–n junction transport characteristics, with the n-type dominating. The MoTe2/MoS2 heterojunction devices generate a self-powered photocurrent at zero bias voltage with a considerable on–off ratio reaching ∼780 and achieve a stable and fast photoresponse, due to the type-II band alignment facilitating efficient electron–hole separation. Utilizing the advantages of a p–n junction with type-II band alignment, this MoTe2/MoS2 vdW heterostructure provides more opportunities for future electronic and optoelectronic applications.

Graphical abstract: Enhanced current rectification and self-powered photoresponse in multilayer p-MoTe2/n-MoS2 van der Waals heterojunctions

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Publication details

The article was received on 15 May 2017, accepted on 24 Jun 2017 and first published on 27 Jun 2017


Article type: Paper
DOI: 10.1039/C7NR03445H
Citation: Nanoscale, 2017, Advance Article
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    Enhanced current rectification and self-powered photoresponse in multilayer p-MoTe2/n-MoS2 van der Waals heterojunctions

    B. Wang, S. Yang, C. Wang, M. Wu, L. Huang, Q. Liu and C. Jiang, Nanoscale, 2017, Advance Article , DOI: 10.1039/C7NR03445H

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