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Issue 27, 2017
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Scaling down contact length in complementary carbon nanotube field-effect transistors

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Abstract

We performed an experimental investigation on contact length (Lc) scaling of carbon nanotube (CNT) complementary field-effect transistors (FETs). Contact resistances of Sc-contacted (for n-type) and Pd-contacted (for p-type) CNT FETs are respectively retrieved based on the experimental data through the transfer length method (TLM). The performance of Lc scaling of Sc/CNT is proved to be comparable to that of the Pd/CNT contact with Lc larger than approximately 40 nm, but it degrades sharply when further scaling down Lc mainly owing to the surface oxidation of the Sc film. After decoupling the effect of oxide thickness, the intrinsic contact scaling behavior of Sc-contacted CNT FETs is found to be as good as that of the Pd-contacted ones, which can further satisfy the requirement of developing complementary CNT FET technology scaled down to the 14 nm node.

Graphical abstract: Scaling down contact length in complementary carbon nanotube field-effect transistors

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Publication details

The article was received on 07 May 2017, accepted on 07 Jun 2017 and first published on 09 Jun 2017


Article type: Paper
DOI: 10.1039/C7NR03223D
Citation: Nanoscale, 2017,9, 9615-9621
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    Scaling down contact length in complementary carbon nanotube field-effect transistors

    L. Liu, C. Qiu, D. Zhong, J. Si, Z. Zhang and L. Peng, Nanoscale, 2017, 9, 9615
    DOI: 10.1039/C7NR03223D

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