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Issue 24, 2017
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Fast gate-tunable photodetection in the graphene sandwiched WSe2/GaSe heterojunctions

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Abstract

We investigated electrical and photoelectrical properties of graphene sandwiched WSe2/GaSe van der Waals heterojunctions. The device showed a high rectification ratio up to 300 at Vds = 1.5/−1.5 V, which is attributed to the built-in electric field in the device. Due to the bipolar property of WSe2, gate-tunable rectification inversion was observed. Meanwhile, the graphene sandwiched heterojunction showed excellent performances on photodetection, where the photoresponsivity of (6.2 ± 0.2) A W−1 can be reached under Vds = −1.5 V and P = 0.2 μW. The device also showed great external quantum efficiency of (1490 ± 50)% and fast response time of ∼30 μs. Our study identified the graphene sandwiched heterojunctions based on 2D materials have great potential for gate-tunable electronic and optoelectronic applications.

Graphical abstract: Fast gate-tunable photodetection in the graphene sandwiched WSe2/GaSe heterojunctions

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Publication details

The article was received on 03 May 2017, accepted on 26 May 2017 and first published on 27 May 2017


Article type: Paper
DOI: 10.1039/C7NR03124F
Citation: Nanoscale, 2017,9, 8388-8392
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    Fast gate-tunable photodetection in the graphene sandwiched WSe2/GaSe heterojunctions

    X. Wei, F. Yan, Q. Lv, C. Shen and K. Wang, Nanoscale, 2017, 9, 8388
    DOI: 10.1039/C7NR03124F

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