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Concurrent Fast Growth of Sub-centimeter Single Crystal Graphene with Controlled Nucleation Density in Confined Channel

Abstract

The synthesis of large-domain sized graphene requires low nucleation density, which inevitably leads to reduced growth rate. To achieve both a large domain size and high growth rate, we designed a simple channel structure that allows us to control the nucleation density by tuning flow dynamics and introducing additional catalyst inside to control the growth kinetics at the same time. The designed channel structure plays three roles in the growth of graphene: 1) retains oxygen to passivate the active nucleation sites; 2) restricts the mass transfer of CH4 to control the supersaturation for nucleation; and 3) provides additional catalytic sites for the decomposition of CH4 to boost the graphene growth rate. Our strategy allows the successful preparation of the sub-centimeter domain-size graphene in one hour with an average growth rate of 70 μm/min, and with a hole mobility of 5500 cm2V-1S-1, which is sufficient for practical applications. Our method paves the way for large-scale production of single crystal graphene or other 2D materials at a highly efficient level.

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Publication details

The article was received on 18 Apr 2017, accepted on 09 Jun 2017 and first published on 13 Jun 2017


Article type: Paper
DOI: 10.1039/C7NR02741A
Citation: Nanoscale, 2017, Accepted Manuscript
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    Concurrent Fast Growth of Sub-centimeter Single Crystal Graphene with Controlled Nucleation Density in Confined Channel

    R. Wu, J. Pan, X. OU, Q. ZHANG, Y. Ding, P. Sheng and Z. Luo, Nanoscale, 2017, Accepted Manuscript , DOI: 10.1039/C7NR02741A

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