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Enhancement of hole mobility in InSe monolayer via InSe and black phosphorus heterostructure


To enhance the low hole mobility (~40 cm2V-1s-1) of InSe monolayer, a novel two-dimensional (2D) van der Waals heterostructure made by InSe and black phosphorus (BP) monolayer with high hole mobility (~103 cm2V-1s-1) has been constructed and its structural and electronic properties are investigated by using first-principles calculations. We find that InSe/BP heterostructure exhibits a direct band gap of 1.39 eV and type-II band alignment with electron (hole) located in InSe (BP) layer. The band offsets of InSe and BP are 0.78 eV for conduction band minimum and 0.86 eV for valence band maximum, respectively. Surprisingly, the hole mobility in InSe/BP heterostructure exceeds 104 cm2V-1s-1, which is one order of magnitude larger than the hole mobility of BP and is three orders larger than that in InSe monolayer. The electron mobility is also increased to 3×103 cm2V-1s-1. The physical reason has been analyzed deeply, and a universal method is proposed to improve the carrier mobility of 2D material by forming its heterostructure with other 2D material with complementary property. The InSe/BP heterostructure can thus be widely used in nanoscale InSe-based field-effect transistors, photodetectors and photovoltaic devices due to its type-II band alignment and high carrier mobility.

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Publication details

The article was received on 17 Apr 2017, accepted on 07 Sep 2017 and first published on 08 Sep 2017

Article type: Paper
DOI: 10.1039/C7NR02725G
Citation: Nanoscale, 2017, Accepted Manuscript
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    Enhancement of hole mobility in InSe monolayer via InSe and black phosphorus heterostructure

    Y. Ding, J. Shi, C. Xia, M. Zhang, J. Du, P. Huang, M. Wu, H. Wang, Y. Cen and S. Pan, Nanoscale, 2017, Accepted Manuscript , DOI: 10.1039/C7NR02725G

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