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Thermal rectification at bimaterial nanocontact interface

Abstract

Thermal rectification can help develop modern thermal manipulation devices but has been rarely engineered. Here, we validated the nanoscale bimaterial interface-induced thermal rectification experimentally for the first time and investigated its underlying mechanism via molecular dynamics simulations. The thermal diode consists of contacted polyamide (PA) and silicon (Si) nanowires. The thermal rectification ratio measured by a high-precision nanoscale experiment reached 4% with an uncertainty of <1%. The temperature has little influence on the ratio, while the decrease in contact length or increase in temperature differences can increase the ratio. The molecular dynamics simulations further confirmed the thermal rectification in the PA/Si nanowires. We found that the localized modes generally gather on the edge, and the higher extent of phonon localization is responsible for the lower thermal conductance in the thermal rectification. Our findings not only have guiding significance, but can also promote the development of interface-based solid-state thermal diodes.

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Supplementary files

Publication details

The article was received on 16 Apr 2017, accepted on 13 Jul 2017 and first published on 14 Jul 2017


Article type: Paper
DOI: 10.1039/C7NR02696J
Citation: Nanoscale, 2017, Accepted Manuscript
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    Thermal rectification at bimaterial nanocontact interface

    Z. Ye and B. Cao, Nanoscale, 2017, Accepted Manuscript , DOI: 10.1039/C7NR02696J

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