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Evidence of electric field tunable tunneling probability in graphene and metal contact

Abstract

Metal-graphene contact resistance has been identified to be a key bottleneck for achieving high performance of graphene transistor. It is crucial to understand the electrical properties of graphene and carrier transport mechanism under the contact metal. Here, we develop a new method to characterize the electrical property of graphene under the metal contact. It is found that the electrical property of graphene under the metal can be tuned by the back gate voltage and shows an ambipolar behavior. A quantum tunneling model for graphene-metal physical contact has been proposed. The electrical field tunable tunneling probability is derived from the measurement results for the first time. The model predicts that even for physical contact, the contact resistance can be much lower than 100 Ω•µm when the graphene is more heavily doped and interfacial layer is eliminated. The study paves the way to obtain ultra low graphene-metal contact resistance in graphene devices for the terahertz application.

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Publication details

The article was received on 08 Apr 2017, accepted on 07 Jun 2017 and first published on 09 Jun 2017


Article type: Paper
DOI: 10.1039/C7NR02502E
Citation: Nanoscale, 2017, Accepted Manuscript
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    Evidence of electric field tunable tunneling probability in graphene and metal contact

    S. Peng, Z. Jin, D. Zhang, J. Shi, Y. Zhang and G. Yu, Nanoscale, 2017, Accepted Manuscript , DOI: 10.1039/C7NR02502E

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