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Tailoring Optical Properties of Atomically-Thin WS2 via Ion Irradiation

Abstract

Two-dimensional transition metal dichalcogenides (TMDCs) exhibit excellent optoelectronic properties. However, the large band gaps in many semiconducting TMDCs make optical absorption in the near-infrared (NIR) wavelength regime impossible, which prevents applications of these materials in optical communications. In this work, we demonstrate that Ar+ ion irradiation is a powerful post-synthesis technique to tailor the optical properties of the semiconducting tungsten disulfide (WS2) by creating S vacancies and thus controlling material stoichiometry. First-principles calculations reveal that the S-vacancies give rise to deep states in the band gap, which determine the NIR optical absorption of the WS2 monolayer. As the density of the S-vacancies increases, the enhanced NIR linear and saturable absorption of WS2 is observed, which is explained by the results of first-principles calculations. We further demonstrate that by using the irradiated WS2 as a saturable absorber in a waveguide system, the passively Q-switched laser operations can be optimized, opening thus new avenues for tailoring the optical response of TMDCs by defect-engineering through ion irradiation

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Publication details

The article was received on 22 Mar 2017, accepted on 06 Jun 2017 and first published on 08 Jun 2017


Article type: Paper
DOI: 10.1039/C7NR02025B
Citation: Nanoscale, 2017, Accepted Manuscript
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    Tailoring Optical Properties of Atomically-Thin WS2 via Ion Irradiation

    L. Ma, Y. Tan, M. Ghorbani-Asl, R. Böttger, S. Kretschmer, S. Zhou, Z. Huang, A. Krasheninnikov and F. Chen, Nanoscale, 2017, Accepted Manuscript , DOI: 10.1039/C7NR02025B

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